n⁺-GaN S/D Epitaxy Service

n⁺-GaN selective regrowth

n⁺-GaN selective regrowth

· Source/Drain selective area regrowth by using MBE

· In-Situ surface cleaning

· Low Temp. Regrowth (~700℃)

· High Doping Concentration (n=5.0_e19~1.0_e20/cm³)

· 2DEG Side-Wall Contact with Regrowth n⁺-GaN Epitaxially

· 100㎜-150㎜-200㎜ Si and SiC Availible

n⁺-GaN regrowth service structure

This is a high-qulity epitaxy service aimed at reduce the Ohmic Contact Resistance of GaN components. Our n+GaN selective regrowth service, offered by IVWorks, utilizes MBE systems to accommodate sizes of up to 200mm and allows for S/D selective area regrowth.

Advantage and Feature

<n⁺-GaN Selective Regrowth>

· Source/Drain Area Regrowth @ Low Temperature

· n⁺-type 1.0E20cm^-3 Doping Concentraion

· low Rc~0.1Ω㎜ secured for various customers requirements

· Stable production based on large production system

Feature of n⁺-GaN Regrowth service flow

The service flow involves the customer etching our AlN HEMT epiwafer or commercial epiwafer and then returning it to us for n⁺-GaN growth. We then proceed with the n⁺-GaN growth.