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Epitaxial Growth

IVW made

Driving circuit integration technology

A GaN power device and driving circuitry must be integrated to implement
a smart power IC. IVWorks can integrate the GaN power device and
Si CMOS on a single substrate using a Si(110) substrate.

Epitaxial Growth
IVW made

Semiconductor defect reduction technology ‘SADA’

self-aligned defect annihilation

Epitaxial Growth
IVW made

Price competitiveness through ‘SR-GaN™’

SADA Reinforced GaN

Epitaxial Growth
IVW made

High-quality GaN thin film growth technology

Crack-Free

Epitaxial Growth
IVW made

Driving circuit integration technology

Epitaxial Growth
IVW made

Single crystal thin film growth equipment technology

Hybrid-MBE

Epitaxial Growth
IVW made

DOMM™

Artificial Intelligence Platform

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IVWorks

(34122) 10-27, Expo-ro 339beon-gil, Yuseong-gu,
Daejeon, Republic of Korea

E-mail. ivw@ivwkr.com Tel. 042-384-2200 Fax. 0303-0910-0763

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