The core technology of GaN epiwafer growth is lowering the defect density resulting from the lattice structure and lattice constant differences between
the substrate and GaN. Self-aligned defect annihilation (SADA) and multi-SADA, the core patented technology that can grow high-quality epiwafers even
in thin film thicknesses, use self-aligned nano quantum dots to suppress the spread of defects and grow high-quality GaN by reducing defects while
maintaining low GaN film thicknesses. SADA is an effective and powerful technology that is applied during growth without external processes.
IVWorks has been granted numerous patents in Korea, USA, and Taiwan.