GaN System says its foundry, TSMC, has expanded GaN production by 10x with both 100V and 650V GaN FET’s shipping in volume. TSMC uses GaN Systems’ proprietary Island Technology. GaN claims the products out-perform silicon power semiconductors, the SiC carbide devices and other GaN products. The GaNPX packaging delivers, says GaN, high current handling, low inductance and good thermal performance.
“We are delighted to confirm that our collaboration with GaN Systems has brought the promise of gallium nitride from concept through reliability testing and on to volume production,” says TSMC’s Sajiv Dalal.
“Smart mobile devices, slim TVs, games consoles, automotive systems and other mass volume items have been designed with GaN transistors as the enabling power technology,” says GaN CEO Girvan Patterson, so it is imperative that devices are available in correspondingly large quantities.
Delivering large volumes of GaN transistors in near-chipscale packaging is the culmination of a journey GaN Systems began in 2008. The company was founded with the mission of creating a low cost, highly reliable GaN-on-Silicon product based on Island Technology, a method of creating small islands where electro-migration is mitigated, die size is minimized and high current devices realized with high yield.
This has allowed global power system manufacturers in the energy storage, enterprise and consumer markets to design, develop, test and bring to market more powerful, lighter and far smaller new products in their quest to attain competitive edge. To meet customers’ increasing demand for high GaN volumes in 2016, TSMC’s commitment to volume production flow comes at the perfect time.