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p-GaN Gate Selective Regrowth

2024.05.17

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p-GaN Selective Regrowth

p-GaN Gate Selective Area Regrowth

 

 

p-GaN Gate Selective Are Regrowth

 

· p-GaN Gate Selective Area Regrowth by using MBE

· In-Situ Surface Cleaning

· Low Temp. Regrowth (~700℃)

· Mg Doping Concentration (n=1.0e18~1.0e20/cm3)

· 100mm – 150mm – 200mm Si and SiC Available

· Stable production based on large production system

 

Feature of p-GaN Regrowth service flow

 

The service flow involves the customer etching our epiwafer or commercial epiwafer and then returning it to us for p-GaN growth. We then proceed with the p-GaN growth.