Epitaxial Growth
Hybrid-MBE is the single crystal growth equipment optimized for the patented technology of IVWorks. It mitigates the low thin film speed problem (2㎛/h or more), which is the biggest drawback of conventional MBE, and can perform the process at a low growth temperature (about 800 degrees) inside a vacuum chamber to grow high-quality thin films with low impurity and crack rates.
Hybrid-MBE?
Hybrid-MBE was created by Korean experts who have continuously worked in the field of epiwafer growth over the years.
A high-purity Al metal source is supplied in a molecular beam in a high-degree vacuum state to extremely limit the inclusion of impurities and eliminate gas-phase reactions. High-quality AIGaN or AIN thin films can be grown. The particle problem is mitigated, and chambers are easily maintained and repaired.
The hybrid-MBE single-crystal growth technology can be readily used with Al, In, etc. and can conveniently control doping to grow various epiwafer structures such as GaN, AIGaN, InGaN, and AIN layers and p- and n-doping layers to be optimized for thin film characteristics required by customers.
The growth process can be monitored in real time to systematically manage the overall crystal structure information of epiwafers.
Thin film growth at a high growth rate of at least 2µmh-1 and a low growth temperature of 800°C to reduce cracking and impurity content.
IVWorks presents a deep-learning-based artificial intelligence (AI) epitaxy platform, DOMMTM, by combining an AI-based image analysis technique with Hybrid-MBE.
Characterization Tools
| Field emission scanning electron microscope | Cross-sectional structure, surface morphology |
| Atomic force microscope | Surface morphology |
| Contactless resistivity measurement | Sheet resistivity mapping |
| Mercury probe CV | Carrier depth profile |
| Hall measurement | 2DEG density, 2DEG mobility |
| Reflectometer | Thickness mapping |
| Laser profiler | Wafer bow |
| Probe station, Parameter analyzer | I-V, C-V |
| Microscope | Surface particle scan |
| X-ray diffraction | Structural properties |
Structure concept
