An analysis image of a wafer with cracks

An analysis image of a wafer with particles

An analysis image of a wafer without defects.

GaN-on-Si or GaN-on-SiC is the technology used for growing GaN on different substrates, which may also cause various problems such as defects and
cracks in the growth process and make it difficult to carry out the next process or directly affect productivity. For GaN-on-Si or GaN-on-SiC,
crystal growth is monitored in real time using artificial intelligence, and the degree of bending and stress applied to wafers to allow high-quality
crystal growth is also monitored and controlled.